Litcius/Paper detail

Simulation study on ferroelectric layer thickness dependence RF/Analog and linearity parameters in ferroelectric tunnel junction TFET

Rajesh Saha

2021Microelectronics Journal38 citationsDOI

Topics & Concepts

TransconductanceLinearityFerroelectricityCapacitanceMaterials scienceTunnel magnetoresistanceOptoelectronicsElectrical engineeringVoltagePhysicsTransistorElectrodeEngineeringDielectricNanotechnologyLayer (electronics)Quantum mechanicsAdvancements in Semiconductor Devices and Circuit DesignFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices
Simulation study on ferroelectric layer thickness dependence RF/Analog and linearity parameters in ferroelectric tunnel junction TFET | Litcius