Two-Dimensional WSe<sub>2</sub>/MoSe<sub>2</sub> Heterostructures Grown by Molecular-Beam Epitaxy
Akihiro Ohtake, Yoshiki Sakuma
Abstract
Large-area two-dimensional MoSe2/WSe2 and WSe2/MoSe2 heterostructures have been successfully fabricated using molecular-beam epitaxy. Highly oriented heterostructures are composed of alternately stacked epitaxial MoSe2 and WSe2 monolayers (MLs) on Se-treated GaAs(111)B substrates with nearly stoichiometric compositions. The MoSe2 and WSe2 MLs are weakly bonded together and show either the stable C7 or the T stacking configuration, irrespective of the stacking order. We further demonstrate that the four-layered heterostructures are realized by the successive growth of MoSe2 and WSe2 MLs.
Topics & Concepts
HeterojunctionStackingMolecular beam epitaxyMonolayerMaterials scienceEpitaxyStoichiometryOptoelectronicsCrystallographyLayer (electronics)NanotechnologyChemistryPhysical chemistryOrganic chemistry2D Materials and ApplicationsMXene and MAX Phase MaterialsPerovskite Materials and Applications