Non-volatile resistive switching mechanism in single-layer MoS<sub>2</sub> memristors: insights from <i>ab initio</i> modelling of Au and MoS<sub>2</sub> interfaces
Gabriele Boschetto, Stefania Carapezzi, Aida Todri‐Sanial
Abstract
The migration of Au atoms to fill the S vacancies in MoS 2 memristors increases the electron injection rate and reduces the contact resistance at the metal–semiconductor interface, thus causing the resistive switch.
Topics & Concepts
MemristorMaterials scienceResistive random-access memoryAb initioLayer (electronics)Non-volatile memorySemiconductorOptoelectronicsMechanism (biology)Contact resistanceResistive touchscreenNanotechnologyElectrodeChemistryElectronic engineeringElectrical engineeringPhysicsPhysical chemistryEngineeringQuantum mechanicsOrganic chemistryAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices2D Materials and Applications