Magnetic-Tunnel-Junction-Based True Random-Number Generator with Enhanced Generation Rate
Xiheng Chen, Jiabin Zhang, Jiang Xiao
Abstract
True random-number generators (TRNGs) are crucial in modern information technology, especially in cryptographic systems. TRNGs can be realized via stochastic physical processes, such as the thermally activated magnetization switching in a magnetic tunnel junction (MTJ). The fluctuations in MTJ-based TRNGs are still too slow for many practical purposes, though. This study proposes that the simple application of a small magnetic field can increase the generation rate of a MTJ-TRNG by several orders of magnitude, up to gigahertz frequencies. This approach could turn commercialized MTJ-MRAM devices into fast TRNGs with minimal modification.
Topics & Concepts
Random number generationTunnel magnetoresistanceMagnetoresistive random-access memoryGenerator (circuit theory)Computer scienceCryptographyMagnetic fieldMaterials scienceElectrical engineeringOptoelectronicsPhysicsNanotechnologyAlgorithmEngineeringRandom access memoryComputer hardwarePower (physics)Quantum mechanicsLayer (electronics)Chaos-based Image/Signal EncryptionMagnetic properties of thin filmsAdvanced Memory and Neural Computing