Study of effects of varying parameters on the dislocation density in 200 mm SiC bulk growth
Sheng'ou Lu, Binjie Xu, Hongyu Chen, Wei Hang, Rong Wang, Julong Yuan, Xiaodong Pi, Deren Yang, Xuefeng Han
Topics & Concepts
DislocationMaterials scienceCrystal (programming language)Crystal growthStress (linguistics)Finite element methodCondensed matter physicsCrystallographyThermodynamicsComposite materialChemistryPhysicsProgramming languageLinguisticsPhilosophyComputer scienceSilicon Carbide Semiconductor TechnologiesSilicon and Solar Cell TechnologiesAluminum Alloys Composites Properties