Perspective on the spin field-effect transistor
M. Ciorga
Abstract
Abstract The spin field effect transistor (sFET), proposed by Datta and Das (1990 Appl. Phys. Lett. 56 665–7), has long been regarded as a model semiconductor spintronic device, offering potential for new, more energy-efficient functionalities in electronic devices. Here, the overview is given how the pursuit of meeting the requirements for implementing the sFET concept has influenced spintronic research, leading to a greater understanding of spin phenomena in solids and resulting in numerous exciting effects. After looking back, based on the recent developments, the possible future directions of the sFET-related research are described.
Topics & Concepts
Perspective (graphical)Field-effect transistorField (mathematics)Spin (aerodynamics)Spin transistorTransistorPhysicsCondensed matter physicsEngineering physicsComputer scienceSpin engineeringQuantum mechanicsMathematicsSpin polarizationArtificial intelligenceThermodynamicsVoltageElectronPure mathematicsQuantum and electron transport phenomenaAdvancements in Semiconductor Devices and Circuit DesignMagnetic properties of thin films