Litcius/Paper detail

Broadband Graphene Field-Effect Coupled Detectors: From Soft X-Ray to Near-Infrared

Jianhang Lv, Yunfan Dong, Xiaoxue Cao, Xinyu Liu, Lingfei Li, Wei Liu, Hongwei Guo, Xiaochen Wang, Srikrishna Chanakya Bodepudi, Yuda Zhao, Yang Xu, Bin Yu

2022IEEE Electron Device Letters18 citationsDOI

Abstract

Here, we report a broadband graphene-silicon field-effect coupled detector (FCD) sensitive to photons spanning from soft X-ray to Near-Infrared region. Unlike traditional charge-coupled devices (CCD) relying on serial charge transfer between potential wells, the FCD integrates photo-sensing, charge integration, field-effect amplification, and random readout in one pixel. The charge integration in the potential well of the semiconductor substrate and field-effect coupled amplification in graphene transistor result in a highly sensitive broadband response. In the X-ray region, the device displays a high sensitivity of 1088 CGy <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">air</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−1</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−2</sup> and a fast response time < ~5 ms. Linear array imaging reveals the potential of our devices for array-based broadband imaging. Our FCD offers a viable strategy to monolithically integrate 2D materials into conventional solid-state imaging technology, exploring the next-generation broadband photodetectors for high-quality imaging and super vision technology.

Topics & Concepts

GrapheneOptoelectronicsBroadbandDetectorPhysicsPhotodetectorField-effect transistorPhoton countingInfraredSiliconTransistorOpticsVoltageQuantum mechanicsGa2O3 and related materialsRadiation Detection and Scintillator TechnologiesGraphene research and applications