Niobium Dayem nano-bridge Josephson gate-controlled transistors
G. De Simoni, C. Puglia, F. Giazotto
Abstract
We report on the realization of Nb-based all-metallic Dayem nano-bridge gate-controlled transistors (Nb-GCTs). These Josephson devices operate up to a temperature of ∼3 K and exhibit full suppression of the supercurrent thanks to the application of a control gate voltage. The dependence of the kinetic inductance and of the transconductance on gate voltage promises a performance already on par with so far realized metallic Josephson transistors and leads us to foresee the implementation of a superconducting digital logic based on the Nb-GCT. We conclude by showing the practical realization of a scheme implementing an all-metallic gate-tunable half-wave rectifier to be used for either superconducting electronics or photon detection applications.