Multilayer MoS <sub>2</sub> Schottky Barrier Field Effect Transistor
S. De Stefano, Alfredo Spuri, Raffaele Barbella, O. Durante, Adolfo Mazzotti, Andrea Sessa, Angelo Di Bernardo, Antonio Di Bartolomeo
Abstract
The miniaturization of electronic components remains a critical focus in electronics, particularly in transistor design, with research exploring new solutions such as the use of two-dimensional materials in Schottky Barrier Field Effect Transistors (SB-FETs). Following the trend, this study presents two-dimensional MoS<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> SB-FETs, configured with back-gate and van der Pauw contacts, and analyses their electrical behaviour through output and transfer characteristics. The consequences that local inhomogeneities due to fabrication processes have on Schottky barriers height and electrical behaviour of the device are underlined. A hierarchy of the Schottky barrier heights at the contacts is established, and a band model is developed to elucidate the underlying conduction mechanisms. This model combines thermionic emission and tunnelling to explain the operation of the studied MoS<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> devices and can be broadly applied to other SB-FETs.