Reductive Thermal Atomic Layer Deposition Process for Gold
Anton Vihervaara, Timo Hatanpää, Heta-Elisa Nieminen, Kenichiro Mizohata, Mykhailo Chundak, Mikko Ritala
Abstract
High Resolution Image Download MS PowerPoint Slide In this work, we developed an atomic layer deposition (ALD) process for gold metal thin films from chloro(triethylphosphine)gold(I) [AuCl(PEt 3 )] and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine [(Me 3 Ge) 2 DHP]. High purity gold films were deposited on different substrate materials at 180 °C for the first time with thermal reductive ALD. The growth rate is 1.7 Å/cycle after the film reaches full coverage. The films have a very low resistivity close to the bulk value, and a minimal amount of impurities could be detected. The reaction mechanism of the process is studied in situ with a quartz crystal microbalance and a quadrupole mass spectrometer.