Approaching a Minimal Topological Electronic Structure in Antiferromagnetic Topological Insulator MnBi<sub>2</sub>Te<sub>4</sub> via Surface Modification
Aiji Liang, Cheng Chen, Huijun Zheng, Wei Xia, Kui Huang, Liyang Wei, Haifeng Yang, Yujie Chen, Yujie Chen, Xin Zhang, Xuguang Xu, Meixiao Wang, Yanfeng Guo, Lexian Yang, Zhongkai Liu, Yulin Chen, Yulin Chen
Abstract
The topological electronic structure plays a central role in the nontrivial physical properties in topological quantum materials. A minimal, “hydrogen-atom-like” topological electronic structure is desired for research. In this work, we demonstrate an effort toward the realization of such a system in the intrinsic magnetic topological insulator MnBi2Te4, by manipulating the topological surface state (TSS) via surface modification. Using high resolution laser- and synchrotron-based angle-resolved photoemission spectroscopy (ARPES), we found the TSS in MnBi2Te4 is heavily hybridized with a trivial Rashba-type surface state (RSS), which could be efficiently removed by the in situ surface potassium (K) dosing. By employing multiple experimental methods to characterize K dosed surface, we attribute such a modification to the electrochemical reactions of K clusters on the surface. Our work not only gives a clear band assignment in MnBi2Te4 but also provides possible new routes in accentuating the topological behavior in the magnetic topological quantum materials.