4 bits/cell 96 Layer Floating Gate 3D NAND with CMOS under Array Technology and SSDs
Pranav Kalavade
Abstract
This paper describes 4 bits/cell (QLC) 3D NAND based on 96 layer Floating Gate (FG) cell and CMOS under Array (CuA), achieving high areal density, performance, and reliability. More than 10million QLC FG 3D NAND SSDs have been shipped for both Client as well as Datacenter SSD applications, which is a significant milestone towards making 4 bits/cell NAND mainstream in the industry.
Topics & Concepts
NAND gateCMOSComputer scienceReliability (semiconductor)Layer (electronics)Logic gateComputer hardwareEmbedded systemOptoelectronicsMaterials scienceNanotechnologyPhysicsAlgorithmQuantum mechanicsPower (physics)Advanced Data Storage TechnologiesSemiconductor materials and devicesCellular Automata and Applications