Experimental demonstration of skyrmionic magnetic tunnel junction at room temperature
Sai Li, Ao Du, Yadong Wang, Xinran Wang, Xueying Zhang, Houyi Cheng, Wenlong Cai, Shiyang Lu, Kaihua Cao, Biao Pan, Na Lei, Wang Kang, Jun‐Ming Liu, A. Fert, Zhipeng Hou, Weisheng Zhao
Abstract
Chiral magnetic skyrmions are topological swirling spin textures that hold promise for future information technology. The electrical nucleation and motion of skyrmions have been experimentally demonstrated in the last decade, while electrical detection compatible with semiconductor processes has not been achieved, and this is considered one of the most crucial gaps regarding the use of skyrmions in real applications. Here, we report the direct observation of nanoscale skyrmions in CoFeB/MgO-based magnetic tunnel junction devices at room temperature. High-resolution magnetic force microscopy imaging and tunneling magnetoresistance measurements are used to illustrate the electrical detection of skyrmions, which are stabilized under the cooperation of interfacial Dzyaloshinskii-Moriya interaction, perpendicular magnetic anisotropy, and dipolar stray field. This skyrmionic magnetic tunnel junction shows a stable nonlinear multilevel resistance thanks to its topological nature and tunable density of skyrmions under current pulse excitation. These features provide important perspectives for spintronics to realize high-density memory and neuromorphic computing.