On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors

E. B. Yakimov, A. Y. Polyakov, Ivan Shchemerov, N. B. Smirnov, A.A. Vasil'ev, А. I. Kochkova, П. С. Вергелес, E. E. Yakimov, А. В. Черных, Minghan Xian, F. Ren, S. J. Pearton