Highly Enhanced Inductive Current Sustaining Capability and Avalanche Ruggedness in GaN p-i-n Diodes With Shallow Bevel Termination
Kaiwen Nie, Weizong Xu, Fangfang Ren, Dong Zhou, Danfeng Pan, Jiandong Ye, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu
Abstract
In this work, small-angle beveled-mesa termination technique was developed in GaN p-i-n power diodes for high avalanche performances. With effective alleviation of electric field crowding effect at the junction sidewall, near uniform distribution of avalanche breakdown was realized. Resultantly, state-of-the-art inductive avalanche current density of ~31.5 kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and average parallel-plane breakdown electric field of 2.86 MV/cm was achieved in the terminated diodes. Meanwhile, ruggedness of the avalanche breakdown has also been evidently promoted, under both repetitive dc reverse breakdown stresses and unclamped inductive switch conditions.