Spin-Valve Effect in Fe<sub>3</sub>GeTe<sub>2</sub>/MoS<sub>2</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> van der Waals Heterostructures
Hailong Lin, Faguang Yan, Ce Hu, Quanshan Lv, Wenkai Zhu, Ziao Wang, Zhongming Wei, Kai Chang, Kaiyou Wang
Abstract
The van der Waals (vdW) materials offer an opportunity to build all-two-dimensional (all-2D) spintronic devices with high-quality interfaces regardless of the lattice mismatch. Here, we report on an all-2D vertical spin valve that combines a typical layered semiconductor MoS 2 with vdW ferromagnetic metal Fe 3 GeTe 2 (FGT) flakes. The linear current–voltage curves illustrate that Ohmic contacts are formed in FGT/MoS 2 interfaces, while the temperature dependence of the junction resistance further demonstrates that the MoS 2 interlayer acts as a conducting layer instead of a tunneling layer. In addition, the magnitude of the magnetoresistance (MR) of 3.1% at 10 K is observed, which is around 8 times larger than that of the reported spin valves based on MoS 2 sandwiched by conventional ferromagnetic electrodes. The MR decreasing monotonically with increasing temperature follows the Bloch’s law. As the bias current decreases exponentially, the MR increases linearly up to a maximum value of 4.1%. Our results reveal the potential opportunities of vdW heterostructures for developing novel spintronic devices.