A Review of Insulation Challenges and Mitigation Strategies in (U)WBG Power Modules Packaging

Abstract

In the ever-growing landscape of electrical power demand, the future of power electronics module packaging lies in the realm of wide-bandgap (WBG) materials, including silicon carbide (SiC), gallium nitride (GaN), and cutting-edge ultra WBG (UWBG) materials like diamond, aluminum nitride (AlN), and hexagonal-boron nitride (h-BN). These materials offer superior properties to traditional silicon-based devices, promising higher power density, reduced weight, and increased operating temperature, voltage, and frequency. However, pushing the boundaries for power electronics modules presents challenges in insulation systems as the encapsulation material and the ceramic substrate may not withstand the functional parameters, potentially leading to unfavorable conditions like high field stress and partial discharge (PD), ultimately resulting in insulation failure. This paper presents a thorough analysis of the characteristics of the electrical insulation materials used in power electronics devices based on the research in WBG packaging conducted in recent years. The significance of maximum electric field stress at triple points (TPs) is examined. Furthermore, the paper reviews the strategies and techniques employed to mitigate the challenges related to maximum field stress and PDs in both encapsulation and substrate materials. It is concluded that the mitigation strategies are promising in improving insulation systems for packaging, but the studies lack their implementation under actual operating conditions of WBG power modules.

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