150 mm SiC Engineered Substrates for High-Voltage Power Devices
Séverin Rouchier, G. Gaudin, J. Widiez, F. Allibert, E. Rolland, Kremena Vladimirova, Guillaume Gelineau, Nicolas Troutot, Christelle Navone, Guillaume Berre, Daphnée Bosch, Yen Lin Leow, Alain Duboust, Alexis Drouin, Jean Marc Bethoux, R. Boulet, Audrey Chapelle, Enrica Cela, Guillaume Lavaitte, A. Bouville-Lallart, Laurent Viravaux, Florence Servant, Shivan Bhargava, Shawn Thomas, Ionut Radu, Christophe Maleville, W. Schwarzenbach
Abstract
Silicon Carbide (SiC) Power Devices have emerged as a breakthrough technology for a wide range of applications in the frame of high power electronics. Despite the continuously improving quality and supply of 4H-SiC substrates, the availability of such wafers is still insufficient. An advantageous opportunity is offered by the Smart Cut TM technology with the integration of a very high quality SiC layer transferred to a low resistivity handle wafer. This bi-layer material enables a significant yield optimization and improvement of the device’s electrical performance. Moreover, an additional key feature of the Smart Cut TM technology is the possibility to re-use multiple times the donor wafer, leading to reduced manufacturing costs and enabling the high volume production of SiC wafers. In this paper we report the latest advances in the development of such so called SmartSiC TM substrates.