(111) vertical-type two-dimensional hole gas diamond MOSFETs with hexagonal trench structures
Jun Tsunoda, Masayuki Iwataki, Nobutaka Oi, Aoi Morishita, Atsushi Hiraiwa, Hiroshi Kawarada
Topics & Concepts
Materials scienceTrenchMOSFETDiamondOptoelectronicsSemiconductorTransistorShort-channel effectField-effect transistorVoltageNanotechnologyElectrical engineeringLayer (electronics)Composite materialEngineeringDiamond and Carbon-based Materials ResearchSemiconductor materials and devicesSilicon Carbide Semiconductor Technologies