Analysis of the Spontaneous Emission Limited Linewidth of an Integrated III–V/SiN Laser
Weng W. Chow, Yating Wan, John E. Bowers, Frédéric Grillot
Abstract
Abstract This article describes a calculation of the spontaneous emission limited linewidth of a semiconductor laser consisting of hybrid or heterogeneously integrated, silicon and III–V intracavity components. Central to the approach are a) description of the multi‐element laser cavity in terms of composite laser/free‐space eigenmodes, b) use of multimode laser theory to treat mode competition and multiwave mixing, and c) incorporation of quantum‐optical contributions to account for spontaneous emission effects. Application of the model is illustrated for the case of linewidth narrowing in an InAs quantum‐dot laser coupled to a high‐ SiN cavity.
Topics & Concepts
Laser linewidthLaserQuantum dot laserSpontaneous emissionOptoelectronicsAmplified spontaneous emissionSemiconductor laser theoryQuantum wellInjection seederMulti-mode optical fiberMaterials sciencePhysicsOpticsOptical fiberSemiconductor Lasers and Optical DevicesPhotonic and Optical DevicesSemiconductor Quantum Structures and Devices