Homoepitaxial growth of AlN on a 2-in.-diameter AlN single crystal substrate by hydride vapor phase epitaxy
Toru Nagashima, Reiko Ishikawa, Tatsuya Hitomi, Reo Yamamoto, Junji Kotani, Yoshinao Kumagai
Topics & Concepts
HydrideEpitaxySubstrate (aquarium)CrystallinityMaterials scienceLayer (electronics)ImpurityCrystal (programming language)Vapor phasePhase (matter)OptoelectronicsAnalytical Chemistry (journal)CrystallographyChemistryNanotechnologyComposite materialMetallurgyOceanographyMetalComputer sciencePhysicsGeologyChromatographyOrganic chemistryProgramming languageThermodynamicsGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties