2.0 kV/2.1 mΩ·cm<sup>2</sup> Lateral p-GaN/AlGaN/GaN Hybrid Anode Diodes With Hydrogen Plasma Treatment
Xing Wei, Xiaodong Zhang, Wenxin Tang, Weining Liu, Xin Zhou, Wenbo Tang, Yongjian Ma, Tiwei Chen, Xingjie Huang, Hong Liang Qian, Guohao Yu, Xuan Zhang, Wenchao Shen, Yaming Fan, Zhongming Zeng, Hanbin Wang, Yong Cai, Baoshun Zhang
Abstract
This letter demonstrates high-performance lateral p-GaN/AlGaN/GaN hybrid anode diodes (HPT-HADs) using a novel hydrogen plasma treatment. Without field plates (FPs) or passivation, the HPT-HAD with anode-cathode distance (<inline-formula> <tex-math notation="LaTeX">${L}_{\text {AC}}$ </tex-math></inline-formula>) of 20 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> showed reverse breakdown voltage (<i>BV</i>) of 2.01 kV with differential specific ON-resistance (<inline-formula> <tex-math notation="LaTeX">${R}_{\text {ON,sp}}$ </tex-math></inline-formula>) of 2.09 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula>cm<sup>2</sup> and power figure-of-merit (FOM) of 1.93 GW/cm<sup>2</sup>. Moreover, the device also exhibited excellent rectifying behaviors with an output current density of 598 mA/mm, an <inline-formula> <tex-math notation="LaTeX">${I}_{\text {ON}}/{I}_{\text {OFF}}$ </tex-math></inline-formula> ratio of <inline-formula> <tex-math notation="LaTeX">$\sim 10^{{10}}$ </tex-math></inline-formula>, an ideality factor (<inline-formula> <tex-math notation="LaTeX">$\eta$ </tex-math></inline-formula>) of 1.04, and a turn-on voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{\text {T}}$ </tex-math></inline-formula>) of 1.3 V. The devices also had a negligible hysteresis due to the hydrogenated p-GaN cap layer and the low-damage plasma treatment. The p-GaN/AlGaN/GaN HAD anodes are promising for next-generation high-voltage power electronics.