All‐Transfer Electrode Interface Engineering Toward Harsh‐Environment‐Resistant MoS<sub>2</sub> Field‐Effect Transistors
Yonghuang Wu, Zeqin Xin, Zhibin Zhang, Bolun Wang, Ruixuan Peng, Enze Wang, Run Shi, Yiqun Liu, Jing Guo, Kaihui Liu, Kai Liu, Kai Liu, Kai Liu
Abstract
Abstract Nanoscale electronic devices that can work in harsh environments are in high demand for wearable, automotive, and aerospace electronics. Clean and defect‐free interfaces are of vital importance for building nanoscale harsh‐environment‐resistant devices. However, current nanoscale devices are subject to failure in these environments, especially at defective electrode–channel interfaces. Here, harsh‐environment‐resistant MoS 2 transistors are developed by engineering electrode–channel interfaces with an all‐transfer of van der Waals electrodes. The delivered defect‐free, graphene‐buffered electrodes keep the electrode–channel interfaces intact and robust. As a result, the as‐fabricated MoS 2 devices have reduced Schottky barrier heights, leading to a very large on‐state current and high carrier mobility. More importantly, the defect‐free, hydrophobic graphene buffer layer prevents metal diffusion from the electrodes to MoS 2 and the intercalation of water molecules at the electrode–MoS 2 interfaces. This enables high resistances of MoS 2 devices with all‐transfer electrodes to various harsh environments, including humid, oxidizing, and high‐temperature environments, surpassing the devices with other kinds of electrodes. The work deepens the understanding of the roles of electrode–channel interfaces in nanoscale devices and provides a promising interface engineering strategy to build nanoscale harsh‐environment‐resistant devices.