Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field
Wenkai Liu, Songsong Chen, Yun Liu, Zhican Wen, Fuman Jiang, Zhongying Xue, Xing Wei, Yuehui Yu
Abstract
A method including a polynomial fitting step was proposed for crystallization interface correction of Czochralski crystal growth simulation, which can obtain an axisymmetric interface under a non-axisymmetric flow when the crystal rotates.
Topics & Concepts
Rotational symmetryCzochralski methodSiliconCrystal (programming language)Materials scienceCrystallizationTransverse planePolynomialInterface (matter)Field (mathematics)Crystal growthFlow (mathematics)CrystallographyCondensed matter physicsMechanicsPhysicsChemistryThermodynamicsOptoelectronicsComputer scienceComposite materialMathematicsEngineeringMathematical analysisCapillary numberStructural engineeringProgramming languagePure mathematicsCapillary actionSolidification and crystal growth phenomenaMetallurgical Processes and ThermodynamicsAluminum Alloy Microstructure Properties