19.2 A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot
Loïck Le Guevel, G. Billiot, X. Jehl, S. De Franceschi, Marcos Zurita, Yvain Thonnart, M. Vinet, M. Sanquer, Romain Maurand, A. G. M. Jansen, Gaël Pillonnet
Abstract
To reach quantum supremacy, quantum computers need >50 logical qubits with <; mv accurate biasing, GHz-range signal handling, and μs readout of thousands of physical qubits at sub-Kelvin temperatures. Silicon-based qubits are a promising approach to scale the qubit number owing to their low footprint (100nm) and gaining from the CMOS industrial background to reach maturity [1]. Moreover, the quantum silicon choice allows the IC community to integrate large-scale qubit-control electronics directly nearby the quantum silicon core, thus drastically reducing the wire-connection number and qubit-addressing fanout, meanwhile increasing the operation bandwidth for error correction and the spin-readout sensitivity.