Quantifying thermal transport in buried semiconductor nanostructures <i>via</i> cross-sectional scanning thermal microscopy
Jean Spièce, Charalambos Evangeli, Alexander Robson, Alexandros El Sachat, Linda Haenel, M. I. Alonso, M. Garriga, Benjamin J. Robinson, Michael Oehme, Jörg Schulze, F. Alzina, Clivia Sotomayor Torres, Oleg Kolosov
Abstract
. By using the new method that provides 10 nm thickness and few tens of nm lateral resolution, we pinpoint crystalline defects in SiGe/GeSn optoelectronic materials by measuring nanoscale thermal transport and quantifying thermal conductivity and interfacial thermal resistance in thin spin-on materials used in extreme ultraviolet lithography (eUV) fabrication processing. The new capability of xSThM demonstrated here for the first time is poised to provide vital insights into thermal transport in advanced nanoscale materials and devices.