Ultrasensitive Self‐Driven Terahertz Photodetectors Based on Low‐Energy Type‐II Dirac Fermions and Related Van der Waals Heterojunctions
Kaixuan Zhang, Zhen Hu, Libo Zhang, Yulu Chen, Dong Wang, Mengjie Jiang, Gianluca D’Olimpio, Li Han, Chenyu Yao, Zhiqingzi Chen, Huaizhong Xing, Chia‐Nung Kuo, C. S. Lue, I. Vobornik, Shaowei Wang, Antonio Politano, Weida Hu, Lin Wang, Xiaoshuang Chen, Wei Lü
Abstract
Abstract The exotic electronic properties of topological semimetals (TSs) have opened new pathways for innovative photonic and optoelectronic devices, especially in the highly pursuit terahertz (THz) band. However, in most cases Dirac fermions lay far above or below the Fermi level, thus hindering their successful exploitation for the low‐energy photonics. Here, low‐energy type‐II Dirac fermions in kitkaite (NiTeSe) for ultrasensitive THz detection through metal‐topological semimetal‐metal heterostructures are exploited. Furthermore, a heterostructure combining two Dirac materials, namely, graphene and NiTeSe, is implemented for a novel photodetector exhibiting a responsivity as high as 1.22 A W −1 , with a response time of 0.6 µs, a noise‐equivalent power of 18 pW Hz −0.5 , with outstanding stability in the ambient conditions. This work brings to fruition of Dirac fermiology in THz technology, enabling self‐powered, low‐power, room‐temperature, and ultrafast THz detection.