Growth and characterization of the β-Ga<sub>2</sub>O<sub>3</sub> (011) plane without line-shaped defects
Boyang Chen, Wenxiang Mu, Yiyuan Liu, Pei Wang, Xu Ma, Jin Zhang, Xuyang Dong, Yang Li, Zhitai Jia, Xutang Tao
Abstract
The β-Ga 2 O 3 (011) plane could be a potential substrate orientation for power devices because it avoids a kind of dislocation which leads to leakage current and breakdown of power devices as the dislocations propagate parallel to the (011) plane.
Topics & Concepts
DislocationMaterials sciencePlane (geometry)Characterization (materials science)Leakage (economics)Line (geometry)Substrate (aquarium)Orientation (vector space)CrystallographyCondensed matter physicsGeometryChemistryComposite materialNanotechnologyPhysicsMathematicsGeologyEconomicsOceanographyMacroeconomicsGa2O3 and related materialsAdvanced Photocatalysis TechniquesZnO doping and properties