Pre-deposition growth of interfacial SiO2 layer by low-oxygen-partial-pressure oxidation in the Al2O3/4H-SiC MOS structure
Dongyuan Zhai, Zhipei Lv, Yi Zhao, Jiwu Lu
Topics & Concepts
X-ray photoelectron spectroscopyMaterials scienceLayer (electronics)Thermal oxidationPartial pressureOxideDielectricAnalytical Chemistry (journal)Deposition (geology)OxygenSilicon carbideThermalOptoelectronicsChemical engineeringComposite materialChemistryMetallurgyThermodynamicsChromatographyOrganic chemistrySedimentBiologyPhysicsPaleontologyEngineeringSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesCopper Interconnects and Reliability