Litcius/Paper detail

Standards for the Characterization of Endurance in Resistive Switching Devices

Mario Lanza, Rainer Waser, Daniele Ielmini, J. Joshua Yang, Ludovic Goux, J. Suñé, Anthony J. Kenyon, Adnan Mehonić, Sabina Spiga, Vikas Rana, Stefan Wiefels, Stephan Menzel, Ilia Valov, Marco A. Villena, E. Miranda, Xu Jing, F. Campabadal, Mireia Bargalló González, Fernando Aguirre, Félix Palumbo, Kaichen Zhu, J.B. Roldán, Francesco Maria Puglisi, Luca Larcher, Tuo‐Hung Hou, Themis Prodromakis, Yuchao Yang, Peng Huang, Tianqing Wan, Yang Chai, K. L. Pey, Nagarajan Raghavan, S. Dueñas, Tao Wang, Qiangfei Xia, Sebastián Pazos

2021ACS Nano251 citationsDOIOpen Access PDF

Abstract

., it cannot reliably demonstrate that the device effectively switches in every cycle and it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices and in many cases has exaggerated their potential. This article proposes and describes a method for the correct characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.

Topics & Concepts

Reliability (semiconductor)Computer scienceNeuromorphic engineeringElectronicsElectronic circuitCharacterization (materials science)Resistive touchscreenPoint (geometry)Field (mathematics)Artificial neural networkArtificial intelligenceElectrical engineeringEngineeringMaterials scienceNanotechnologyMathematicsQuantum mechanicsComputer visionPhysicsGeometryPure mathematicsPower (physics)Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices