Engineering second-order topological insulators via coupling two first-order topological insulators
Lizhou Liu, Jiaqi An, Yafei Ren, Ying‐Tao Zhang, Zhenhua Qiao, Qian Niu
Abstract
We theoretically investigate the engineering of two-dimensional second-order topological insulators with corner states by coupling two first-order topological insulators. We find that the interlayer coupling between two topological insulators with opposite topological invariants results in the formation of edge state gaps, which are essential for the emergence of the corner states. Using the effective Hamiltonian framework, we elucidate that the formation of topological corner states requires either the preservation of symmetry in the crystal system or effective mass countersigns for neighboring edge states. Our proposed strategy for inducing corner state through interlayer coupling is versatile and applicable to both ${\mathbb{Z}}_{2}$ topological insulators and quantum anomalous Hall effects. We demonstrate this approach using several representative models including the seminal Kane-Mele model, the Bernevig-Hughes-Zhang model, and the Rashba graphene model to explicitly exhibit the formation of corner states via interlayer coupling. Moreover, we also observe that the stacking of the coupled ${\mathbb{Z}}_{2}$ topological insulating systems results in the formation of the time-reversal invariant three-dimensional second-order nodal ring semimetals. Remarkably, the three-dimensional system from the stacking of the Bernevig-Hughes-Zhang model can be transformed into second-order Dirac semimetals, characterized by one-dimensional hinge Fermi arcs. Our strategy of engineering second-order topological phases via simple interlayer coupling promises to advance the exploration of higher-order topological insulators in two-dimensional spinful systems.