Novel radiation-hardened-by-design (RHBD) 14T memory cell for aerospace applications in 65 nm CMOS technology
Pengfei Li, Xiuying Wang, Yin Zhang⋆, Haoyu Wang, Jianjie Lu, Qiang Zhao, Licai Hao, Chunyu Peng, Wenjuan Lu, Zhiting Lin, Xiulong Wu
Topics & Concepts
Static random-access memoryCMOSNoise marginSoft errorTransistorSingle event upsetRadiationComputer scienceElectronic engineeringPhysicsElectrical engineeringComputer hardwareEngineeringVoltageOpticsRadiation Effects in ElectronicsLow-power high-performance VLSI designVLSI and Analog Circuit Testing