Characterization of dislocation etch pits by molten KOH etching in n- and p-type 4H–SiC epilayers doped by ion implantation
Jiaxu Gao, Tao Ju, Liguo Zhang, Xiang Kan, Rongkun Ji, Wenbo Tang, Dan Fang, Zhipeng Wei, Xuan Zhang, Baoshun Zhang, Zhongming Zeng
Topics & Concepts
Materials scienceDislocationEtch pit densityEtching (microfabrication)DopingIonAluminiumCrystallographyAnalytical Chemistry (journal)Composite materialOptoelectronicsChemistryChromatographyLayer (electronics)Organic chemistrySilicon Carbide Semiconductor TechnologiesSilicon and Solar Cell TechnologiesSemiconductor materials and devices