InGaN monolithic full-color light-emitting diode developed by selective removal of active layers in a single p–n junction
Koichi Goshonoo, Koji Okuno, Masaki Ohya
Abstract
Abstract We demonstrate a monolithic InGaN light-emitting diode (LED) that emits red, green, and blue (RGB) light. The proposed LED has a simple structure with stacking RGB light-emitting layers on n-GaN, wherein unnecessary layers were removed based on the desired emission color and stacking p-GaN layer. The electroluminescence characteristics of the LED indicated that the peak wavelengths at 20 mA are R : 632.9 nm, G : 519.0 nm, and B : 449.5 nm, and the external quantum efficiencies are R : 0.28%, G : 8.3%, and B : 0.84%. This structure can be manufactured using only semiconductor processes, thus rendering smaller and higher-resolution microdisplays possible.
Topics & Concepts
Materials scienceOptoelectronicsLight-emitting diodeStackingDiodeRGB color modelElectroluminescenceColor rendering indexWavelengthBlue lightQuantum efficiencyLayer (electronics)OpticsNanotechnologyChemistryPhysicsOperating systemComputer scienceOrganic chemistryGaN-based semiconductor devices and materialsMetal and Thin Film MechanicsSemiconductor materials and devices