A Type-II WSe2/BP heterostructure with adjustable electronic properties under external electric field and biaxial strain
Jinzhe Xuan, Lijun Luan, Jing He, Huaxin Chen, Yan Zhang, Jian Liu, Ye Tian, Xing Wei, Yun Yang, Jibin Fan, Li Duan
Topics & Concepts
HeterojunctionStackingElectric fieldSemiconductorMaterials scienceBand gapvan der Waals forceCondensed matter physicsPhotoelectric effectOptoelectronicsDirect and indirect band gapsElectronic band structureElectronic structureBand diagramChemistryPhysicsOrganic chemistryMoleculeQuantum mechanics2D Materials and ApplicationsMXene and MAX Phase MaterialsGraphene research and applications