High-Pressure Synthesis of Single-Crystalline SnS Nanoribbons
Xinyu Zhang, Yuyang Shi, Zude Shi, Hang Xia, Mingyu Ma, Yiliu Wang, Kang Huang, Ye Wu, Yongji Gong, Huilong Fei, Yongmin He, Gonglan Ye
Abstract
Two-dimensional tin monosulfide (SnS) is attractive for the development of electronic and optoelectronic devices with anisotropic characteristics. However, its shape-controlled synthesis with an atomic thickness and high quality remains challenging. Here, we show that highly crystalline SnS nanoribbons can be produced via high-pressure (0.5 GPa) and thermal treatment (400 °C). These SnS nanoribbons have a length of several tens of micrometers and a thickness down to 5.8 nm, giving an average aspect ratio of ∼30.6. The crystal orientation along the zigzag direction and the in-plane structural anisotropy of the SnS nanoribbons are identified by transmission electron microscopy and polarized Raman spectroscopy, respectively. An ionic liquid-gated field-effect transistor fabricated using the SnS nanoribbon exhibits an on/off current ratio of >10 3 and a field-effect mobility of ∼0.7 cm 2 V –1 s –1 . This work provides a unique way to achieve one-dimensional growth of SnS.