Investigation of Temperature-Dependent Dynamic R<sub>ON</sub> of GaN HEMT with Hybrid-Drain under Hard and Soft Switching
Shaocheng Li, Shu Yang, Shaowen Han, Kuang Sheng
Abstract
GaN hybrid drain-embedded gate injection transistor (HD-GIT) can effectively suppress dynamic on-resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> ) degradation by hole injection from the p-GaN drain (PD) to release the trapped electrons. In this work, the dynamic R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> performance of the GaN HD-GIT under hard and soft switching at elevated temperature has been comprehensively investigated. Under hard switching, the high temperature and high voltage, facilitating the turning on of the PD junction and/or charge transport in the buffer, can enhance hole injection from PD or positive buffer charging, leading to superior dynamic R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> performance particularly for high-temperature and high-voltage operation.