Interface-relevant out-of-plane spin polarization in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Ir</mml:mi><mml:msub><mml:mi>Mn</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>/permalloy bilayers
Shixuan Liang, Lei Han, Yunfeng You, Hua Bai, Feng Pan, Cheng Song
Abstract
Out-of-plane spin polarization (${\ensuremath{\sigma}}_{z}$) has potential applications for magnetic memory with high storage density and low energy consumption. Several noncollinear antiferromagnets have been confirmed to generate ${\ensuremath{\sigma}}_{z}$ due to their triangular spin configuration on kagome planes, including $\mathrm{Ir}{\mathrm{Mn}}_{3}$. Apart from the spin configuration of the (110)-oriented $\mathrm{Ir}{\mathrm{Mn}}_{3}$, we demonstrate that the interface of $\mathrm{Ir}{\mathrm{Mn}}_{3}$/permalloy also contributes to the generation of ${\ensuremath{\sigma}}_{z}$. With Cu insertion between $\mathrm{Ir}{\mathrm{Mn}}_{3}$ and permalloy, interfacial ${\ensuremath{\sigma}}_{z}$ vanishes, which further supports the interfacial origin of ${\ensuremath{\sigma}}_{z}$. We are not only convinced that the interface-relevant ${\ensuremath{\sigma}}_{z}$ is independent of exchange coupling between $\mathrm{Ir}{\mathrm{Mn}}_{3}$ and permalloy but also propose several possible origins of interface-relevant ${\ensuremath{\sigma}}_{z}$. Our findings enrich the understanding of generating ${\ensuremath{\sigma}}_{z}$ in antiferromagnets/ferromagnets bilayers. The interface-relevant ${\ensuremath{\sigma}}_{z}$ broadens the scope of material design and proposes a potential path to optimize magnetic memories with low power consumption.