Design of low power, variation tolerant single bitline 9T SRAM cell in 16-nm technology in subthreshold region
Chandramauleshwar Roy, Aminul Islam
Topics & Concepts
Static random-access memoryTransistorComputer scienceCacheProcess variationElectronic engineeringDynamic demandVoltageSubthreshold conductionNode (physics)Power (physics)Electrical engineeringEngineeringParallel computingPhysicsStructural engineeringQuantum mechanicsLow-power high-performance VLSI designAdvancements in Battery MaterialsAdvanced Memory and Neural Computing