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Investigation on Be, Mg, Ca, B, Ga, C, Si, and Ge atoms doped on Al (111) surface and their effect on oxygen adsorption: A first-principle calculation

Liang Junxi, Qi Bomiao, Lu Mengmeng, Zhou Yaoyu, Ren Fang, Yan Shen, Guihua Li, Shaofeng Pang, Wang Yanbin, Qiong Su

2024Surfaces and Interfaces8 citationsDOI

Topics & Concepts

Materials scienceAdsorptionDopingOxygenSurface (topology)SiliconFirst principleGermaniumOxygen atomPhysical chemistryAnalytical Chemistry (journal)Atomic physicsDensity functional theoryComputational chemistryMoleculeMetallurgyOptoelectronicsOrganic chemistryPhysicsMathematicsChemistryGeometryChromatographySemiconductor materials and devicesBoron and Carbon Nanomaterials ResearchCatalytic Processes in Materials Science
Investigation on Be, Mg, Ca, B, Ga, C, Si, and Ge atoms doped on Al (111) surface and their effect on oxygen adsorption: A first-principle calculation | Litcius