Chern-Insulator Phase in Antiferromagnets
Yuntian Liu, Jiayu Li, Qihang Liu
Abstract
The long-sought Chern insulators that manifest a quantum anomalous Hall effect are typically considered to occur in ferromagnets. Here, we theoretically predict the realizabilities of Chern insulators in antiferromagnets, in which the magnetic sublattices are connected by symmetry operators enforcing zero net magnetic moment. Our symmetry analysis provides comprehensive magnetic layer point groups that allow antiferromagnetic (AFM) Chern insulators, revealing that an in-plane magnetic configuration is required. Followed by first-principles calculations, such design principles naturally lead to two categories of material candidates, exemplified by monolayer RbCr 4 S 8 and bilayer Mn 3 Sn with collinear and noncollinear AFM orders, respectively. We further show that the Chern number could be tuned by slight ferromagnetic canting as an effective pivot. Our work elucidates the nature of the Chern-insulator phase in AFM systems, paving a new avenue for designing quantum anomalous Hall insulators with the integration of nondissipative transport and the promising advantages of the AFM order.