Review on Group-V Doping in CdTe for Photovoltaic Application
Akira Nagaoka, Santosh K. Swain, Amit Munshi
Abstract
In recent years, one of the most important advancements in cadmium telluride photovoltaic research and technology has been the realization that group-V doping is a viable strategy to increase open-circuit voltage and long-term reliability. Considering the critical importance of this topic, this article reviews the fundamentals of group-V doping, including the properties of group-V doped single crystals produced by various methods, doping mechanisms and limits, doping of polycrystalline films, and device performance. Research, which attempts to relate group-V doping to device efficiency, is assessed and the gaps in the current information are highlighted. We also provide important issues with group-V doping and suggest possible mitigation strategies.