Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing
Chenlu Wang, Qinglong Yan, Chunxu Su, Sami Alghamdi, Emad Ghandourah, Zhihong Liu, Xin Feng, Weihang Zhang, Kui Dang, Yingmin Wang, Jian Wang, Jincheng Zhang, Hong Zhou, Yue Hao
Abstract
In this work, we have achieved novel lateral enhancement-mode (E-M) and depletion-mode (D-M) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 metal-oxide-semiconductor junction field-effect- transistors (MOS-JFETs) featuring a low gate leakage current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{I}_{{\text {G}}}$ </tex-math></inline-formula> ) and a large gate swing. Ascribing to the high-quality SiO2 layer above the P-NiO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{{\text {X}}}}$ </tex-math></inline-formula> /N-Ga2O3 heterojunction (HJ), the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{I}_{G}$ </tex-math></inline-formula> was suppressed for over 6 orders of magnitudes when compared with the heterojunction FET (HJ-FET). An off-state drain current of ~ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{-{7}}$ </tex-math></inline-formula> mA/mm was also achieved at elevated temperature (T) up to 200 °C, indicating strong thermal stability of our device. The depletion-mode (D-M) MOS-JFET with source-to-drain spacing ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{L}_{{\text {SD}}}$ </tex-math></inline-formula> ) of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$12 ~\mu \text{m}$ </tex-math></inline-formula> demonstrates a breakdown voltage (BV) of 1.32 kV and specific on-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{R}_{{\text {on},\text {sp}}}$ </tex-math></inline-formula> ) of 4.4 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula> cm2, delivering a high Baliga’s power figure of merit (PFOM) of 405 MW/cm2. Due to the potential of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 MOS-JFET in power electronics, these findings offer a compel ling pathway for future high-power and high-efficiency systems.