Growing of bulk β-(Al<sub> x </sub>Ga<sub>1−x </sub>)<sub>2</sub>O<sub>3</sub> crystals from the melt by Czochralski method and investigation of their structural and optical properties
D. A. Zakgeim, D. A. Bauman, Д. О. Панов, V. A. Spiridonov, А.В. Кремлева, A. M. Smirnov, Maxim Odnoblyudov, А. Е. Романов, V.E. Bougrov
Abstract
Abstract Bulk (Al x Ga 1− x ) 2 O 3 crystals with an Al fraction x in the range from 0.0 to 0.23 were successfully grown by the Czochralski method. An increase in the band gap from 4.7 to 5.1 eV with the rise of the Al content was demonstrated by analyzing optical transmission spectra. The crystal quality of the obtained samples was characterized by X-ray diffractometry. The appearance of the crystal’s mosaic blockness was found for the Al fraction x above 0.05.
Topics & Concepts
Crystal (programming language)Materials scienceCzochralski methodCrystallographyAnalytical Chemistry (journal)Band gapSpectral lineCrystal growthChemistryOptoelectronicsPhysicsAstronomyProgramming languageChromatographyComputer scienceGa2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis Techniques