New Lead-free Organic–Inorganic Hybrid Semiconductor Single Crystals for a UV–Vis–NIR Broadband Photodetector
Fengcai Liu, Xia Cai, Kai Liu, Saqib Rafique, Fatemeh Behrouznejad, Kejun Bu, Xujie Lü, Jiao Wang, Shuaiqin Wu, Xudong Wang, Yiyi Pan, Xiaoguo Li, Yichen Cai, Junqiang Zhu, Zhijun Qiu, Anran Yu, Hong Shen, Jianlu Wang, Yiqiang Zhan
Abstract
Organic–inorganic hybrid semiconducting (OIHS) materials, which can detect broader spectral regions, are highly desired in several applications including biomedical imaging, night vision, and optical communications. Although lead (Pb)–halide perovskites have reached a mature research stage, high toxicity of Pb hinders their large-scale viability. Tin (Sn)-based perovskites are the most common OIHS broadband light absorbers that replace toxic Pb; however, they are extremely unstable due to the notorious Sn2+ oxidation. Herein, a novel, non-toxic, and solution-processed millimeter-sized OIHS single crystal [Ga(C3H7NO)6](I3)3 has been grown at room temperature. Both the absorption measurement and density functional theory calculations have confirmed a narrow indirect band gap of 1.32 eV. The corresponding photodetector based on this single crystal demonstrated excellent performance including an ultraviolet–visible–near infrared (UV–vis–NIR) response between 325 and 1064 nm, fast response time (trise/tdecay = 3.8 ms/5.4 ms), and profound air storage stability (41 h), thus outperforming most common photodetectors based on Sn-based perovskites. This work not only provides a profound understanding of this novel organic–inorganic single-crystal material but also demonstrates its great potential to realize the high-performance UV–vis–NIR broadband photodetectors.