Anomalous Nernst and Seebeck coefficients in epitaxial thin film <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Co</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>MnAl</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>Si</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Co</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mi>FeAl</mml:mi></mml:mrow></mml:math>
Aaron Breidenbach, H. L. Yu, T. A. Peterson, Anthony McFadden, William K. Peria, C. J. Palmstrøm, P. A. Crowell
Abstract
The anomalous Nernst effect (ANE), in which a thermal gradient drives a transverse charge current, can have both extrinsic and intrinsic origins. The intrinsic ANE should be enhanced when the Fermi level is in close proximity to Weyl points in the band structure. Magnetic Heusler alloys allow for tuning both the topology of the band structure and the position of the Fermi level. Here, the authors show that this tunability can be used to enhance the intrinsic ANE in epitaxial Heusler alloy thin films.
Topics & Concepts
Nernst effectNernst equationEpitaxyCondensed matter physicsMaterials scienceFermi levelPhysicsSeebeck coefficientThin filmThermoelectric effectThermodynamicsNanotechnologyElectrodeNuclear physicsQuantum mechanicsElectronLayer (electronics)Heusler alloys: electronic and magnetic propertiesMagnetic properties of thin filmsTopological Materials and Phenomena