A flexible Hf0.5Zr0.5O2 thin film with highly robust ferroelectricity
Xiang Zhou, Haoyang Sun, Jiachen Li, Xinzhe Du, He Wang, Zhen Luo, Zijian Wang, Yue Lin, Shengchun Shen, Yuewei Yin, Xiaoguang Li
Abstract
Flexible hafnia-based ferroelectric memories are arousing much interest with the ever-growing demands for nonvolatile data storage in wearable electronic devices. Here, high-quality flexible Hf0.5Zr0.5O2 membranes with robust ferroelectricity were fabricated on inorganic pliable mica substrates via an atomic layer deposition technique. The flexible Hf0.5Zr0.5O2 thin membranes with a thickness of ∼8 nm exhibit a high remanent polarization of ∼16 μC/cm2, which possess very robust polarization switching endurance (>1010 cycles, two orders of magnitude better than reported flexible HfO2-based films) and superior retention ability (expected >10 years). In particular, stable ferroelectric polarization as well as excellent endurance and retention performance show negligible degradations under 6 mm radius bending conditions or after 104 bending cycles with a 6 mm bending radius. These results mark a crucial step in the development of flexible hafnium oxide-based ferroelectric memories for wearable electronic devices.