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The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors

Guangyuan Jiang, Yuanjie Lv, Zhaojun Lin, Y. H. Yang, Yang Liu

2020Physica E Low-dimensional Systems and Nanostructures12 citationsDOI

Topics & Concepts

HeterojunctionScatteringPolarization (electrochemistry)Condensed matter physicsMaterials scienceBarrier layerElectron densityField-effect transistorCharge densityElectronOptoelectronicsTransistorLayer (electronics)PhysicsOpticsChemistryNanotechnologyVoltagePhysical chemistryQuantum mechanicsGaN-based semiconductor devices and materialsZnO doping and propertiesGa2O3 and related materials
The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors | Litcius