High quality N-polar GaN films grown with varied V/III ratios by metal–organic vapor phase epitaxy
Chengguo Li, Kang Zhang, Qiaoyu Zeng, Xuebing Yin, Xiaoming Ge, Junjun Wang, Qiao Wang, Chenguang He, Wei Zhao, Zhitao Chen
Abstract
while keeping a hillock-free smooth surface morphology. The overall quality of the N-polar GaN films was considerably improved. We believe that this simple, yet effective growth technique has great application prospects for high-performance N-polar GaN-based electron devices.
Topics & Concepts
CrystallinityMaterials scienceEpitaxyHillockNucleationSapphireAnalytical Chemistry (journal)ImpurityNitrideMetalorganic vapour phase epitaxyMetalPhase (matter)Morphology (biology)Layer (electronics)NanotechnologyChemistryOpticsMetallurgyComposite materialBiologyGeneticsOrganic chemistryLaserChromatographyPhysicsGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties