Interface Engineering of TiO<sub>2</sub>Photoelectrode Coatings Grown by Atomic Layer Deposition on Silicon
Jesse Saari, Harri Ali‐Löytty, Mari Honkanen, Antti Tukiainen, Kimmo Lahtonen, Mika Valden
Abstract
. No interfacial Si oxide formed during the ALD growth, but during the heat treatment, the thickness of interfacial Si oxide increased to 1.8 nm for all of the samples. Increasing the ALD growth temperature to 150 °C enabled crystallization at 300 °C, which resulted in reduced growth of interfacial Si oxide followed by a 70 mV improvement in the photocurrent onset potential.
Topics & Concepts
Atomic layer depositionMaterials scienceCrystallizationAnnealing (glass)AnataseOxideChemical engineeringAmorphous solidTitaniumPhotocurrentCoatingTitanium oxideSiliconNanotechnologyLayer (electronics)MetallurgyOptoelectronicsChemistryPhotocatalysisCatalysisCrystallographyBiochemistryEngineeringSemiconductor materials and devicesElectronic and Structural Properties of OxidesGa2O3 and related materials